A GaN-based MMIC power amplifier supplies 10 W output power from 6 to 18 GHz.
A high-power monolithic-microwave-integrated-circuit (MMIC) amplifier based on gallium-nitride (GaN) semiconductor technology has been developed for communications, test, and military applications from 6 to 18 GHz. Model HMC7149 provides 10-W output power from 6 to 18 GHz and typical small-signal gain of 20 dB. It provides +40-dBm saturated output power and draws 680 mA quiescent current from a +28-VDC supply. Model HMC7149, supplied as a die measuring just 3.4 × 4.5 × 0.1 mm, achieves 10-dB gain at saturated output power with ±0.5-dB gain flatness. Input/output return loss is typically 17 dB while power-added efficiency (PAE) is typically 22%.
Hittite Microwave Corp., 2 Elizabeth Dr., Chelmsford, MA 01824; (978) 250-3343, FAX: (978) 250-3373.