A GaN high-electron-mobility-transistor (HEMT) device provides high pulsed output power for S-band systems.
Model IGN2729M250C is an internally impedance-matched, gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device suitable for S-band radar applications from 2.7 to 2.9 GHz. It delivers at least 250 W output power when operating with a 300-μs pulse and 10% pulse duty cycle, with typically 10-dB gain across the frequency range, with an average output-power rating of 25 W. The transistor is specified for Class-AB bias conditions. In addition, for applications from 2.7 to 3.1 GHz, the firm recently introduced their model IGN2731M200 GaN-on-silicon-carbide transistors with rating of 200 W output power for 300-μs pulses at a 44% duty cycle. The depletion-mode device is also internally impedance matched and specified for use under Class AB bias conditions. It is supplied in a compact housing measuring 1.070 x 0.400 in. (27.18 x 10.16 mm).
Integra Technologies, Inc., 321 Coral Circle, El Segundo, CA 90245; (310) 606-0855, FAX: (310) 606-0865.
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