A series of PIN diodes handle power levels as high as 100 W to 12 GHz.
Among its many components on display at IMS booth No. 930 in Seattle, MACOM Technology Solutions will be demonstrating its capabilities in high-power broadband shunt PIN diodes. Suitable for high-power switching applications, these shunt PIN diodes are capable of handling power levels to 100 W at frequencies to 6 GHz, and they are usable for applications through 12 GHz. As an example, model MADP-011028-14150T is a silicon shunt PIN diode designed for applications from 50 MHz to 12 GHz. It is rated for minimum breakdown voltage of 200 V and maximum power dissipation of 4.3 W. The diodes are supplied in plastic packages measuring just 1.5 x 1.2 mm. According to Product Manager, Paul Wade, “This family of shunt PIN diodes offers an excellent combination of broadband performance, ease of use and low cost.” To learn more, visit M/A-COM Technology Solutions at IMS booth No. 930.
Editor's Note: For more show coverage, be sure to visit Microwaves & RF's IMS 2013 page.