This GaN HEMT device is suitable for use in amplifiers for pulsed S-band radar applications.
Model IGN2729M250C is an internally impedance-matched gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device suitable for amplifying signals in S-band radar systems from 2.7 to 2.9 GHz. The GaN transistor supplies at least 250 W peak output power with 10-dB typical gain when operating with pulse widths of 300 μs or less and duty cycles of 10% or less. The device is rated for 25 W average output power. Specified operation is under Class-AB bias conditions.
Integra Technologies, Inc., 321 Coral Circle, El Segundo, CA 90245; (310) 606-0855, FAX: (310) 606-0865.