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[Industry News] Richardson Distributes HVVi Semiconductor Devices Jack Browne | ED Online ID #19251 | June 19, 2008
Richardson Electronics, Ltd. announced that it has signed a global distribution agreement with HVVi Semiconductors, Inc. to distribute that firm's RF power transistors. HVVi's devices employ the firm's High Voltage Vertical Field Effect Transistor [HVVFET] technology to achieve high output power with high efficiency over wide frequency bandwidths for radar and avionics applications.
As Chris Marshall, vice president of Richardson Electronics’ Wireless and Broadband Communications Group, notes: "We pride ourselves on working with the industry’s leading-edge suppliers to bring pioneering technology to the market. With HVVi's innovative geometries, they fill a void in the Avionics transponder and ground-based radar markets. Gain, efficiency, and load-pull survivability are just a few of their attributes." HVVi's high-power transistors are designed for use at +48 VDC and are targeted at pulsed RF applications in the L-band such as IFF, TCAS, Mode-S, TACAN and ground-based radar.
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