Home Product Directory Topics Note Pad electronica 2008 EuMW 2008 Back Issues RF Blogs Military Electronics Subscribe News Online News Design Features Web Seminars PartFinder Whitepapers Microwave Legends Newsletter WebConnect RF Design  RSS


PART SEARCH :
GlobalSpec - The Engineering Search Engine


Related Resources

  
Reprints   Printer-Friendly    Email this Article    RSS        Font Size     What's This?

[Industry News]
CEL Selling Low-Noise SiGe Transistor Chips

Jack Browne  |  ED Online ID #19294 |  June 26, 2008

After a long history of offering packaged devices only, California Eastern Laboratories (CEL) is now selling the model UPG303100G silicon germanium (SiGe) heterojunction-bipolar-transistor chip, ideal for applications in low-noise amplifiers (LNAs). The transistor die features a low noise figure of 0.8 dB at 2 GHz and 0.95 dB at 5.2 GHz with maximum stable gain of 21.5 dB at 2 GHz and 10 dB at 5.2 GHz. The transistor is fabricated with NEC's newest 110-GHz-transition-frequency SiGe process.

California Eastern Laboratories





Reprints   Printer-Friendly    Email this Article    RSS        Font Size     What's This?




POST YOUR COMMENTS HERE
Name:

Email:
Rate this article:

 less useful more useful 
1
2
3
4
5

Your Comments: