Home Product Directory Topics Note Pad MTT-S Video Coverage Back Issues RF Blogs Military Electronics Subscribe News Online News Design Features Web Seminars PartFinder Whitepapers Microwave Legends Newsletter EuMW 2007 WebConnect RF Design  RSS


PART SEARCH :
GlobalSpec - The Engineering Search Engine


Related Resources

  
Reprints   Printer-Friendly    Email this Article    RSS        Font Size     What's This?

[Industry News]
SiGe Process Promises "Green," Efficient ICs

Jack Browne  |  ED Online ID #19298 |  June 26, 2008

Jazz Semiconductor is now offering its 0.18-micron silicon-germanium (SiGe) BiCMOS process for next-generation, "green," energy-efficient analog integrated circuits (ICs). The firm's SBC18 process provides significant power and efficiency savings compared to conventional silicon CMOS and supports the design of extremely low-power devices for integrated wireless networking products. SiGe NPN transistors fabricated with the process feature as much as 30 percent power savings over standard CMOS devices in high-speed analog circuits using current-mode-logic (CML) technology. The SBC18 process yields SiGe devices with transition frequencies to 200 GHz for fabricating high-frequency designs, including automotive radar devices at 77 GHz.

Jazz Semiconductor





Reprints   Printer-Friendly    Email this Article    RSS        Font Size     What's This?




POST YOUR COMMENTS HERE
Name:

Email:
Rate this article:

 less useful more useful 
1
2
3
4
5

Your Comments: