Low-noise amplifiers (LNAs) that maintain spectral purity under a wide range of conditions will usually find a place in many different systems, and a new family of LNAs from Pasternack Enterprises promises excellent performance from 9 kHz to 18 GHz. Based on GaAs pseudomorphic-high-electron-mobility-transistor (pHEMT) device technology, the amplifiers are supplied in compact modules with SMA coaxial connectors. They are available with noise figures from 0.8 to 3.0 dB and gain levels from 25 to 50 dB, depending upon model and frequency. The output-power levels extend from +10 to +18 dBm.
As an example, model PE15A1001 offers a noise figure of 2 dB from 2 to 4 GHz with 38-dB small-signal gain and ±1-dB gain flatness. It provides minimum saturated output power of +13 dBm and draws 200 mA supply current from a +12-VDC supply. At higher frequencies, model PE15A1004 operates from 12 to 18 GHz with noise figure of 3 dB and 38-dB small-signal gain with ±1 dB gain flatness. It also offers +13-dBm saturated output power across its frequency range. For lower noise figure, model PE15A1010 works from 2 to 6 GHz with 0.9-dB noise figure and small-signal gain of 40 dB with ±1-dB gain flatness. It delivers +14-dBm output power at 1-dB compression and draws 90 mA current from a +12-VDC supply.
Hermetic and nonhermetic versions are available; all are unconditionally stable with built-in voltage regulation, bias sequencing, and reverse-bias protection. They are fully internally impedance matched for use at 50 Ω, eliminating the need for external impedance-tuning components. The amplifiers are designed for an operating temperature range of -40 to +85°C. The new LNA family features a total of 14 amplifiers ready for shipment from stock.
Pasternack Enterprises, 17802 Fitch, Irvine, CA 92614; (949) 261-1920
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