Gallium-nitride (GaN) amplifiers are in abundance at the 2012 IMS, including at booth No. 2414 from CTT, Inc. The company recently announced a line of GaN power amplifiers for use from 6.4 to 11.0 GHz with as much as 160 W output power from a single unit. The AGN and AGW series amplifiers are available in narrowband and wideband models where high output power is a requirement from a compact, light-weight housing.
The amplifiers rely on advanced coupler design and unique substrate material selection and can operate from a single voltage supply. A dozen models are available for use from 6.4 to 11.0 GHz in CEW mode. As an example, model AGN/105-4957-P provides 80 W minimum saturated output power with at least 57-dB gain from 9.5 to 10.5 GHz. It measures only 4.32 x 4.50 x 0.68 in. and draws 13.8 A from a +30-VDC supply.