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Of course, the exhibition floor at IMS will be once again be teeming with large numbers of components and component makers. Targeting the high-Q requirements of modern filters, for instance, BSC will be showcasing its high-K-material filters in a small footprint. Using thin-film techniques lends this production process high levels of precision and repeatability. Operating from -55° to +125°C, these filters serve applications encompassing L-band to millimeter frequencies with varying topologies of diplexers and filters—bandpass, notch, low-pass, high-pass, and roofing. Solutions can be produced in open tile for direct die-level integration or packaged footprints for solder reflow.

Coaxicom will be featuring its phase-adjustable connector, which is now offered with a direct solder solution for RG402, 0.141 semi-rigid and ultra-flex cables. According to the firm, the connector allows for precise manual adjustments to phase without signal degradation over frequency ranges to 18 GHz. The 3993-2 RF connector has an adjustment range of 180 deg. minimum and a maximum VSWR of 1.30:1 with insertion loss 0.42 dB.

Highlights for Coilcraft include the compact PFD3215 series coupled chip power inductor. The dual-wound PFD3215 features a 1:1 turn ratio. Itis designed for use in a variety of circuits including flyback, multi-output buck, and SEPIC. These versatile inductors also can be used as two single inductors connected in series or parallel, as a wideband transformer, or as a common-mode choke. Measuring 3.2 × 2.3 × 1.5 mm, they are a good choice when board space is limited and a low profile is desired. Typical applications include tablets and other battery-operated mobile devices requiring precise voltage regulation, efficient charging, and maximum operating time. Also included in the Coilcraft showcase will be the new 1111SQ series of high-performance, square air-core inductors offer high Q factors (up to 200 at 400 MHz) and inductance values from 27 to 47 nH.

New from MACOM is the ceramic GaN-on-SiC HEMT power transistors and GaN-in-plastic-packaged power transistors. The gold-metallized GaN-on-SiC MAGX-001090-600L00 and MAGX-000912-500L00 are optimized for pulsed avionics applications, such as secondary surveillance radar in air-traffic-control systems. They put out 600 W or 500 W of power with typical gain of 21.4 dB or 19.8 dB and 63% or 60% efficiency. The MAGX-001090-600L00 also offers low thermal resistance of 0.05°C/W and load mismatch tolerance of 5:1. In addition, it can be used effectively under more demanding Mode-S ELM operating conditions, thanks to its low pulse drop of 0.2 dB. Paul Beasly, product manager of MACOM, comments, “These devices are an ideal candidate for customers looking to upgrade avionics systems, which require increased functionality and flexibility without sacrificing power, efficiency, or size.”

Microwave Week Makes A Splash In Tampa Bay, Fig. 8

From the student paper competition to a hospitality suite, transportation, and refreshments, Mini-Circuits is a very active IMS sponsor this year. At its booth, the firm will be highlighting a wide array of products including a programmable attenuator, RF switches, and a microwave amplifier. The RCDAT-6000-90 attenuator, for example, is either USB or Ethernet controlled with attenuation to 90 dB. With a step size of 0.25 dB, it can be switched at a rate of 650 ns while covering 1 MHz to 6 GHz. Leading the firm’s switch line is the JFW series of single-pull double-throw (SPDT) and single-pull six-throw (SP6T) RF switches. These switches have a single positive supply voltage with a medium power requirement to 35 dBmover a range of 10 MHz to 6 GHz.

Also on hand at Mini-Circuits will be the AVM-273HP+ three-stage balanced, wideband monolithic amplifier delivering power to 0.5 W. Operating from 13.0 to 26.5 GHz, it is designed using PHEMT technology and is unconditionally stable. The amplifier’s isolation enables it to be used as a wideband isolation amplifier or buffer amplifier in a variety of microwave systems including point-to-point radios, military EW and radar, Dr oppler beam sharpening, and VSAT.

Peregrine Semiconductor is debuting power limiters that it claims may replace GaAs-based PIN diodes. These 50-W UltraCMOS RF power limiters are the PE45140 (20 MHz to 2 GHz) and PE45450 (9 kHz to 6 GHz). By providing a monolithic alternative to discrete, PIN-diode limiters, they promise to serve test-and-measurement, land-mobile-radio, wireless-infrastructure, military, and radar systems. On a chip that is 8× smaller than the board space required by discrete, PIN-diode solutions, Peregrine claims that its new power limiters provide a 10× to 100× improvement in response and recovery time. In addition, they supposedly deliver an improvement in linearity (IP3) greater than 40 dB while offering a 20× improvement in electrostatic-discharge (ESD) protection. “Poised to replace GaAs-based PIN diodes, our new UltraCMOS RF power limiters will prove to be another example of UltraCMOS technology displacing GaAs in the marketplace,” says Duncan Pilgrim, Peregrine’s VP of marketing.

Among other components being highlighted at this year’s show will be the higher-frequency band-reject and cavity-comb line/interdigital bandpass filters from RLC Electronics. RLC’s notch filters, which cover 0.01 to 28 GHz, are characterized by having the reverse properties of bandpass filters.They boast typical insertion loss under 1.0 dB with VSWR below 1.5:1. For their part, the fixed-tuned bandpass filters are centered in the Ka band (26.5 to 40.0 GHz). They provide rejection carrying to 50 GHz. Both filter types are constructed to operate over the most severe military environmental conditions. 

Microwave Week Makes A Splash In Tampa Bay, Fig. 9Taking pride in its latest low-noise amplifiers (LNAs), Skyworks Inc. is featuring the SKY67150-396LF (300 to 2200 MHz) and SKY67153-396LF (700 to 3800 MHz) GaAs LNAs. The devices use Skyworks’ pseudomorphic high-electron-mobility-transistor (HEMT) enhancement-mode process in a compact 2-×-2-mm, 8-pin, dual flat no-lead package. The internal active-bias circuitry vows to provide stable performance over temperature and process variations. These LNAs also can externally adjust supply current.

Proof of the recent joining of RFMD and TriQuint can be seen in the joint design and sales support for a 5-GHz, IEEE 802.11a/n/ac-compliant wireless-local-area-network (WLAN) FEM from TriQuint. The TQP8080 combines an LNA with bypass mode and a PA with an integrated power detector through an SPDT transmit/receive (T/R) switch. The internally matched input and output work to ease design together with the CMOS-compatible control voltages. According to John Hamilton, director of Marketing of RFMW, “With all of the competition for front-end modules, TriQuint has raised the bar with their TPQ8080 WLAN FEM. The inclusion of a power detector for the 5-GHz PA, bypass mode for the LNA, and an SPDT switch is an 802.11ac FEM integrator’s dream come true.”

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