This solid-state amplifier uses GaN device technology for 300 to 400 W output power from 2.9 to 3.1 GHz.
Model SSPA 2.9-3.1-300 is a high power gallium-nitride (GaN) amplifier that can be used for pulsed or continuous-wave (CW) applications from 2.9 to 3.1 GHz, also usable from 2.7 to 2.9 GHz and from 2.7 to 3.5 GHz. The amplifier is rated for typical peak output power of 300 to 400 W at room temperature with typical noise figure of about 10 dB. The output power across the band is flat within ±0.25 dB. The input/output VSWR is typically 2.0:1. The amplifier is designed for use with a +5-VDC supply. It measures 5.00 x 8.00 x 1.94 in.; weighs about 2.5 lbs with SMA input and output connectors; and has an operating temperature range of -40 to +85°C. The amplifier includes an external DC blanking command that enables and disables the module in typically 5.0 μs. Standard features include over/under voltage protection and reverse polarity protection. The output is fully protected from an open or short circuit presented to this port with no damage.
Aethercomm, Inc., 3205 Lionshead Ave., Carlsbad, CA 92010; (760) 208-6002, FAX: (760) 208-6059, e-mail: sales@aethercomm.com, www.aethercomm.com.