A leading supplier of GaN technology explains how these high-power devices serve counter-IED applications.
One of the foremost supporters of gallium-nitride (GaN) RF technology is Cree RF. The firm's Director of Sales and Marketing for RF Products, Tom Dekker, will be reporting on its offerings this coming Thursday, Feb. 20—specifically, on how GaN can work with counter improvised explosive devices (C-IEDs). Dekker is scheduled to present “The Impact of GaN RF Technology on C-IED” at the Third International Conference on Electronic Warfare (EWCI 2014) in Bangalore, India.
The technical conference has been organized by the Association of Old Crows (AOC) India. The Cree presentation will explain how GaN field-effect transistors (FETs) provide greater benefits than other high-power RF semiconductor technologies, including higher output-power densities than available silicon or gallium arsenide (GaAs) high-frequency transistors.