A broadband GaN amplifier achieves excellent thermal resistance to minimize heat buildup in a plastic package.
Gallium nitride (GaN) is a dynamic semiconductor material for RF/microwave high-power devices, although thermal issues are still a concern. To help “beat the heat,” the model NPA1006 broadband GaN amplifier delivers 15 W output power from 20 MHz to 1 GHz, and does it in a compact 6 × 5 mm plastic DFN surface-mount package. Achieving 60% drain efficiency helps with the thermal management. The NPA1006 also exhibits 4.6°C/W thermal resistance to help dissipate heat. The high-electron-mobility-transistor (HEMT) amplifier operates from a +28-VDC supply and provides 14-dB gain across the frequency range.
Nitronex Corp., 523 Davis Dr., Ste. 500, Morrisville, NC 27560; (919) 807-9100, FAX: (919) 472-0692.