These GaN transistors provide 250 and 500 W output power for 1.2-to-1.4-GHz L-band radar systems.
Models CGHV14250 and CGHV14500 are gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) devices capable of 250 and 500 W output power in 1.2-to-1.4-GHz L-band radar amplifiers. The transistors are usable in applications from UHF through 1800 MHz, including in tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems. The 250-W model CGHV14250 offers 330 W typical output power, with 18-dB power gain and 77% typical drain efficiency. The 500-W CGHV14500 provides 500 W typical output power, with 17-dB power gain and 70% typical drain efficiency. Both devices feature 0.3-dB pulsed amplitude droop. Internally impedance matched on the input ports, these devices are based on the firm’s 50-V, 0.4-μm GaN-on-SiC foundry process and are supplied in ceramic/metal flange and pill packages.
Cree, Inc., 4600 Silicon Dr., Durham, NC 27703; (866) 924-3645.