A. Lochtefeld

Articles by A. Lochtefeld
Form GaAs/InGaAs Lasers On Virtual Ge 1
GaAs/InGaAs quantum-well lasers can be formed on virtual Ge substrates on silicon by means of metal-organic-chemical vapor deposition using several growth techniques.

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GaN Roundtable: The State of GaN Reliability Today

Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.

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Agilent Technologies Complex Modulation Generation with Low Cost Arbitrary Waveform Generators - Agilent's Trueform Architecture for Wireless Applications
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