Jack Browne

Technical Contributor
Microwaves & RF

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

Articles by Jack Browne
High-Def Scopes Grab 0.2 To 1 GHz
A line of digital oscilloscopes uses 12-b ADCs and advanced filtering to render 15-b effective signal-analysis resolution.
Amplifiers Draw Upon Variety Of Technologies
High-frequency amplifiers are supported by a wide range of electronic technologies, from vacuum tubes to transistors, with generous government funding in search of performance improvements.
Automobiles Racing To Higher Frequencies
Automotive designers are taking advantage of unused frequency bands for control and communications among different electronic subsystems.
25-GSamples/s DAC Powers Function Modules
A line of function modules is now available to generate signals through about 12 GHz using a 25-GSamples/s, 10-b DAC.
EM Simulator Enhanced For 2013
This latest version of a powerful EM simulator features new solver technology and a streamlined new GUI.
Handling The Heat In RF/MW Circuits
Thermal management in high-frequency circuits depends on careful choice of circuit and packaging materials to remove heat and preserve high performance levels.
Vacuum Devices Drive High Power
Vacuum electron devices are still widely used throughout the high-frequency industry for applications requiring extremely high output-power densities.
Real-Time Analyzers Grab 50-GHz Signals
These real-time spectrum analyzers are available with frequency ranges extending to 50 GHz and analysis bandwidths as wide as 160 MHz.
Exploring The Promise of GaN-on-Si
Research is evaluating the possibility of growing GaN semiconductor materials on silicon as well as silicon-carbide (SiC) base materials.
Pursuing GaN Growth On Silicon
The cost of GaN semiconductor materials can be dramatically reduced if GaN can be grown on silicon base substrates.
GaN Amps Power CATV Applications
A pair of miniature power amplifiers use GaN technology for low distortion in CATV applications.
50-V GaN HEMTs Aim At Cell Networks
A line of 50-Ω impedance-matched power transistors has been developed for high-efficiency at cellular communications frequencies when operating from 50-V supplies.
Doherty Amp Boosts China’s LTE Signals
A miniature but robust power amplifier based on a discrete GaN device has been developed for LTE microcellular base stations.
GaN Material Costs Dropping Over Time
The cost of GaN power semiconductor materials is expected to drop rapidly over the next six years, according to a detailed market study.
Lockheed Martin Inks DARPA LSARM Deal
Lockheed Martin was awarded an additional DARPA contract for continued development of the LRASM system.

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