The model HMC-ALH508 GaAs high-electron-mobility-transistor (HEMT), monolithic-microwave-integrated-circuit (MMIC) amplifier die from Hittite Microwave Corp. is ideal for automotive radar, military, and space applications from 71 to 86 GHz. The three-stage chip features 13 dB small-signal gain with 4.5 dB noise figure and +7 dBm output power at 1-dB compression. It operates from two supply voltages at +2.1 and +2.4 VDC while consuming only 30 mA supply current. The amplifier is fully passivated for reliable operation.
Advertisement
GaAs Amplifier Chip Boosts 71 To 86 GHz
Advertisement
Advertisement
Webcasts
GaN Roundtable: The State of GaN Reliability Today
Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.
Advertisement
Whitepapers
New App Note: Best Practices for Making the Most Accurate Radar Pulse Measurements
Sponsored by Agilent Technologies
Download this app note
Agilent Technologies Complex Modulation Generation with Low Cost Arbitrary Waveform Generators - Agilent's Trueform Architecture for Wireless Applications
Sponsored by Agilent Technologies
Download this white paper
Advertisement
Advertisement
Advertisement
Advertisement
Advertisement
Advertisement