Model PTVA101K02EV is a high-power silicon RF LDMOS field-effect transistor (FET) designed for use in power amplifiers operating in the frequency range from 1030 to 1090 MHz. In an example pulsed application at 1030 MHz, the transistor delivers 1000 W output power with 100-μs-wide pulses at 10% duty cycle while drawing quiescent current of 0.15 A from a +50-VDC supply. It features minimum gain of 16 dB with typical gain of 17 dB and typical return loss of 22 dB. The minimum drain efficiency is 56% with typical drain efficiency of 58%. The transistor, which is lead-free and RoHS compliant, is capable of withstanding a 10:1 VSWR load mismatch at the 1000-W output-power level. It comes with gas integrated electrostatic-discharge (ESD) protection to prevent damage during handling. Infineon Technologies North America Corp., 640 North McCarthy Blvd., Milpitas, CA 95035; (866) 951-9519, e-mail: highpowerRF@infineon.com, www.infineon.com.