A new power amplifier (PA) promises to satisfy applications ranging from RF-identification (RFID) readers to cellular infrastructure. Specifically, the 2-W MAAP-007649-000100 covers the 800-to-1000-MHz frequency band. At 900 MHz, its typical performance is 19 dB gain, +34 dBm output power at 1-dB compression, and +49 dBm output third-order intercept point. The device features good adjacent-channel-power-ratio (ACPR) linearity performance for cellular-infrastructure standards. It requires a single +7.5-VDC supply in addition to a +4.5-V reference pin for power-down and power-control capability. In RFID reader applications, it provides greater than 1 W dense-reader-mode (DRM) spectral mask linearity and a flat gain response. The MAAP-007649-000100 is designed on a high-breakdown-voltage gallium-arsenide (GaAs) HBT process. It is available in 4-mm, 16-lead PQFN surface-mount packaging. P&A: stock; $4.94 (10,000).

M/A-COM, 1011 Pawtucket Blvd., Lowell, MA 01853; (978) 442-5000, Internet: www.macom.com

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