After a long history of offering packaged devices only, California Eastern Laboratories (CEL) is now selling the model UPG303100G silicon germanium (SiGe) heterojunction-bipolar-transistor chip, ideal for applications in low-noise amplifiers (LNAs). The transistor die features a low noise figure of 0.8 dB at 2 GHz and 0.95 dB at 5.2 GHz with maximum stable gain of 21.5 dB at 2 GHz and 10 dB at 5.2 GHz. The transistor is fabricated with NEC's newest 110-GHz-transition-frequency SiGe process.
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CEL Selling Low-Noise SiGe Transistor Chips
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GaN Roundtable: The State of GaN Reliability Today
Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.
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