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CEL Selling Low-Noise SiGe Transistor Chips

June 26, 2008

After a long history of offering packaged devices only, California Eastern Laboratories (CEL) is now selling the model UPG303100G silicon germanium (SiGe) heterojunction-bipolar-transistor chip, ideal for applications in low-noise amplifiers (LNAs). The transistor die features a low noise figure of 0.8 dB at 2 GHz and 0.95 dB at 5.2 GHz with maximum stable gain of 21.5 dB at 2 GHz and 10 dB at 5.2 GHz. The transistor is fabricated with NEC's newest 110-GHz-transition-frequency SiGe process.

California Eastern Laboratories

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.