Ideal for cellular and other wireless communications designs, model HMC921LP4E is a GaAs heterojunction-bipolar-transistor (HBT) power amplifier (PA) from Hittite Microwave capable of 2 W output power from 400 to 2700 MHz. The robust output power is accompanied by as much as 16-dB gain and third-order intercept point of +49 dBm. The compact amplifier can be biased in either a low quiescent current mode or a maximum output power mode by adjusting a single external resistor. The RoHS-compliant device is supplied in a 4 x 4 mm leadless QFN package and operates from a single +5-VDC supply.
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GaAs MMIC PA Drives 0.4 To 2.7 GHz
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Webcasts
GaN Roundtable: The State of GaN Reliability Today
Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.
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New App Note: Best Practices for Making the Most Accurate Radar Pulse Measurements
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Agilent Technologies Complex Modulation Generation with Low Cost Arbitrary Waveform Generators - Agilent's Trueform Architecture for Wireless Applications
Sponsored by Agilent Technologies
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