Model RF3932 is an unmatched gallium nitride (GaN) power transistor from RF Micro Devices that can provide 75 W output power when impedance matched to applications from DC to 3 GHz. The transistor features peak efficiency of better than 65 percent and is housed in a hermetic, flanged ceramic two-leaded package. According to Bob Van Buskirk, President of RFMD's Multi-Market Products Group (MPG), "We look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and green' power consumption advantages." The 48-V model RF3932 transistor is suitable for commercial wireless and military radar applications.
Advertisement
GaN Transistor Delivers 75 W
Advertisement
Advertisement
Webcasts
GaN Roundtable: The State of GaN Reliability Today
Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.
Advertisement
Whitepapers
New App Note: Best Practices for Making the Most Accurate Radar Pulse Measurements
Sponsored by Agilent Technologies
Download this app note
Agilent Technologies Complex Modulation Generation with Low Cost Arbitrary Waveform Generators - Agilent's Trueform Architecture for Wireless Applications
Sponsored by Agilent Technologies
Download this white paper
Advertisement
Advertisement
Advertisement
Advertisement
Advertisement
Advertisement