Ideal for WiMAX and LTE applications from 2.3 to 2.8 GHz, model HMC755LP4E is a GaAs InGaP heterojunction-bipolar-transistor (HBT) amplifier from Hittite Microwave that provides as much as 31 dB gain across its operating band. Designed for use with a single +5-VDC supply, it achieves 28-percent power-added efficiency (PAE) when delivering +33 dBm saturated output power. The GaAs MMIC amplifier, which provides +25-dBm orthogonal-frequency-division-multiplex (OFDM) output power, boasts error-vector-magnitude (EVM) performance of 2.5 percent. It includes three control pins for adjusting output power levels and an integrated output power detector pin. The amplifier is housed in a 4 x 4 mm QFN package.
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InGaP HBT Amp Fires 2.3 To 2.8 GHz
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GaN Roundtable: The State of GaN Reliability Today
Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.
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