With the debut of the ILD1011M550HV, Integra Technologies, Inc. is expanding its family of high-power LDMOS transistors for L-band avionics applications. The ILD1011M550HV offers output power starting at 550 W with 16.5 dB nominal gain from 1030 to 1090 MHz. It vows to exhibit high ruggedness into any phase of a 20:1 load VSWR.

Using a complete gold metal system--die, wire bond, and package--the ILD1011M550HV promises to deliver maximum reliability in pulsed avionics systems. The transistor is internally pre-matched for ease of use and 100-percent production tested in a broadband RF test fixture. With this product debut, the company also has announced the imminent arrival or high-power, pre-matched devices for DME and TACAN applications.