Designed for military applications, the model SM2560-47GN power amplifier from Stealth Microwave delivers +47 dBm typical output power (50 W) from 2.5 to 6.0 GHz. Based on gallium nitride (GaN) device technology, the amplifier provides 45 dB linear gain with +/-2 dB gain flatness across the frequency range. It has an integral heat sink and features over-voltage protection and thermal protection with an automatic reset feature. The temperature-compensated amplifier maintains gain variations within +/-1 dB over a temperature range of -40 to +85C. Available as a module (7.50 x 3.97 x 0.79 in.) or in a rack-mount unit, the power amplifier draws 7 A from a +28-VDC supply.
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Rugged 50-W Amp Powers 2.5 To 6.0 GHz
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GaN Roundtable: The State of GaN Reliability Today
Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.
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New App Note: Best Practices for Making the Most Accurate Radar Pulse Measurements
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Agilent Technologies Complex Modulation Generation with Low Cost Arbitrary Waveform Generators - Agilent's Trueform Architecture for Wireless Applications
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