SiGe Process Promises "Green," Efficient ICs

June 26, 2008

Jazz Semiconductor is now offering its 0.18-micron silicon-germanium (SiGe) BiCMOS process for next-generation, "green," energy-efficient analog integrated circuits (ICs). The firm's SBC18 process provides significant power and efficiency savings compared to conventional silicon CMOS and supports the design of extremely low-power devices for integrated wireless networking products. SiGe NPN transistors fabricated with the process feature as much as 30 percent power savings over standard CMOS devices in high-speed analog circuits using current-mode-logic (CML) technology. The SBC18 process yields SiGe devices with transition frequencies to 200 GHz for fabricating high-frequency designs, including automotive radar devices at 77 GHz.

Jazz Semiconductor

About the Author

Jack Browne

Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.