A line of energy-efficiency RF transistors from Infineon include electrostatic-discharge (ED) protection. The low-noise bipolar transistors are ideal for wireless applications, including in mobile handsets and wireless local area networks (WLANs). The new transistors provide effective ESD protection of up to 2 kV human body model (HBM). They offer noise figures as low as 0.6 dB at 2.4 GHz with high gain and moderate output power. For example, model BFP640ESD features maximum power gain of 23.5 dB under low-noise conditions at 1.5 GHz and operating from a +3-VDC supply. For high linearity operation, the maximum power gain is 26.5 dB at 1.5 GHz. The device has a minimum noise figure of 0.6 dB with associated gain of 23.5 dB at 1.5 GHz, with +12 dBm output power at 1-dB compression and an output third-order intercept point of +26.5 dBm. The ESD-protected bipolar transistors are supplied in SOT-343 and TSFP-4 packages.