GaN-on-SiC HEMT Pushes Pulses To 1090 MHz (.PDF Download)

Designed for high-power pulsed avionics applications, model MAGX-001090-600L00 is a gold-metalized, GaN-on-SiC high-electron-mobility transistor (HEMT) capable of 600 W output power from 1030 to 1090 MHz when driving signals with 32 μs pulse width at 2% pulse duty cycle. Suitable for secondary surveillance radar...

Register or sign in below to download the full article in .PDF format, including high resolution graphics and schematics when applicable.

Register for Complete Access (Valid Email Required)

2012 salary surveyBy registering on Microwaves & RF now, you'll not only gain access to GaN-on-SiC HEMT Pushes Pulses To 1090 MHz (.PDF Download), you'll also become part of the RF engineering community.  Plus as a bonus you’ll get to a complimentary copy of The Top 5 RF Essentials compendium (PDF download) when you register now.
Joining the Microwaves & RF community also allows you to: Become a member of a group of exclusive RF Engineers.

• Start your own conversation by commenting on any article or blog
• Communicate and network with other Engineers from all over the world
• Gain access to download high quality content including schematics and diagrams where applicable.

Already registered? here.
Whitepapers

Increase Power Amplifier Test Throughput with the Keysight PXIe Vector Signal Generator and Analyzers
Sponsored by Keysight Technologies
Download this white paper


Poster Worldwide Spectrum Allocations
Sponsored by Tektronix
Download this white paper


Achieving Excellent Spectrum Analysis Results Using Innovative Noise, Image and Spur Suppression Techniques
Sponsored by Keysight Technologies
Download this white paper

Webcasts

Optimizing 100G Ethernet Electrical Measurements
Tue, November 5, 2:00pm EST
Sponsored by Keysight Technologies

Register Now!

Connect With Us

Sponsored Introduction Continue on to (or wait seconds) ×