Home

GaN-on-SiC HEMT Pushes Pulses To 1090 MHz (.PDF Download)

Nov. 7, 2013

Designed for high-power pulsed avionics applications, model MAGX-001090-600L00 is a gold-metalized, GaN-on-SiC high-electron-mobility transistor (HEMT) capable of 600 W output power from 1030 to 1090 MHz when driving signals with 32 μs pulse width at 2% pulse duty cycle. Suitable for secondary surveillance radar...

Register or sign in below to download the full article in .PDF format, including high resolution graphics and schematics when applicable.

Download

Continue Reading

Picking Proper PCB Materials For LNAs

Opting for Single-Layer or Multilayer Capacitors

Sponsored Recommendations

Guide to VNA Automation in MATLAB Using the TCP Interface

In this guide, advantages of using MATLAB with TCP interface is explored. The how-to is also covered for setting up automation language using a CMT VNA.

In-Circuit Antenna Verification

In this video, Brian Walker, Senior RF Design Engineer at Copper Mountain Technologies, shows how there can be significant variation of the performance of a PCB-mounted antenna...

UHF to mmWave Cavity Filter Solutions

Cavity filters achieve much higher Q, steeper rejection skirts, and higher power handling than other filter technologies, such as ceramic resonator filters, and are utilized where...

Wideband MMIC Variable Gain Amplifier

The PVGA-273+ low noise, variable gain MMIC amplifier features an NF of 2.6 dB, 13.9 dB gain, +15 dBm P1dB, and +29 dBm OIP3. This VGA affords a gain control range of 30 dB with...