GaN News & Information

Gallium nitride (GaN) has taken over for gallium arsenide (GaAs) as the RF/microwave semiconductor material of the future. The wide-bandgap material enables fabrication of transistors with higher output-power levels at higher frequencies than traditional GaAs microwave semiconductor materials, and can also be used for reliable power supplies. This III-V semiconductor compound, which has been the basis for light-emitting diodes (LEDs) for decades, has been used for high-power, high-frequency transistors for wireless communications and for lower-frequency power supplies. Check back here for the latest on GaN technology and how it pertains to microwave and RF applications.

Industry Resources:

University of Cambridge

Digi-Key’s Introduction to GaN Technology

IEEE Journal: GaN-Based RF Power Devices and Amplifiers

Air Force Research Laboratory Presentation

Ioffe Physico-Technical Institute GaN page

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