Model TQP4M0010 is a gallium arsenide (GaAs) field-effect-transistor (FET) absorptive switch for use from 100 to 4500 MHz. The single-pole, double-throw (SPDT) switch provides 50 dB or more isolation between ports through 1 GHz and typically 40 dB or better isolation through 4.5 GHz. It minimizes insertion loss to typically 0.5 dB from 0.1 to 1.0 GHz; 0.6 dB from 1.0 to 2.5 GHz; 0.7 dB from 2.5 to 3.0 GHz; and 0.8 dB from 3.0 to 4.5 GHz. The switch, which achieves a typical input 1-dB compression point of +33 dBm at 2 GHz, can handle input signals as large as 2 W (+36 dBm). Ideal for wireless infrastructure applications and in test and measurement equipment, the GaAs switch is supplied in a 4 x 4 mm leadless surface-mount package, operates on supplies from +3 to +5 VDC, and handles operating temperatures from -40 to +85°C.