RFMD has been a pioneer in using gallium nitride on silicon-carbide (GaN-on-SiC) device technology in Doherty amplifiers for a variety of wireless infrastructure applications. The firm readily shares its ideas on designing amplifiers and using software simulations, including electromagnetic (EM) simulation tools, to model the performance of linear high-power Doherty amplifiers for fourth-generation (4G) and other wireless communications applications. Learn more about implementing and testing GaN-on-SiC technology from a webcast presented by Christopher Burns, RFMD’s RF Power Platform Development Manager.