A gallium-arsenide (GaAs), monolithic- microwave-integrated-circuit (MMIC) power amplifier (PA), dubbed the model XP5002-BD, covers 2.7 to 3.8 GHz. It boasts 32 dB of large-signal gain and +41.5 dBm saturated output power. The amplifier promises to deliver 40 percent power-added efficiency. It provides 15 dB input return loss and 14 dB output return loss. The PA requires a gate bias voltage of -5 V and gate supply current of 150 mA. At a typical drain bias voltage of 8 V, drain supply current is 4.5 A. The MMIC uses the company's GaAs PHEMT device model technology fabricated with optical-gate lithography. The chip's surface passivation protects and provides a rugged part with backside via holes and gold metallization, thereby allowing either a conductive epoxy or eutectic solder die attach process. With its integrated bias circuitry, internal matching, and superior gain performance, the XP5002-BD provides a compact implementation for S-band highpower applications. It is well suited for radar, satellite, and commercial applications. P&A: stock.
Mimix Asia, 3F, 3-2 Industry East IX Rd., Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C; +886-3- 567-9680, FAX: +886-3-567-9433, Internet: www.mimixasia.com.