Using a dual-sided bias architecture, the XP1057-BD gallium-arsenide (GaAs) monolithic-microwave-integrated- circuit (MMIC) power amplifier delivers pulsed saturated output power of +41 dBm and small-signal gain of 17 dB. The amplifier covers 13.5 to 16 GHz while achieving an output third-order intercept point of +48 dBm. In addition to its +39 output power at 1-dB compression, the amplifier achieves a +48-dBm output third-order intercept point across the band. It operates on supply voltage to +8 VDC, supply currents of 600, 1400, and 3000 mA (Id1, Id2, and Id3, respectively), and gate-bias voltage of 0.3 VDC. The amplifier's typical input and output return losses are each rated at 10 dB. Gain flatness is usually 1 dB while reverse isolation is 60 dB. The device uses GaAs PHEMT device model technology and is based on optical lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect it. A rugged part with backside via holes and gold metallization are provided for use with either a conductive-epoxy or eutectic solder die-attach process. The device is well suited for millimeter-wave military, radar, satellite, and weather applications. Samples and production quantities are available in eight weeks.

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, TX 77099; (281) 988-4600, FAX: (281) 988-4615, Internet: www.mimixbroadband.com.

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