A trio of amplifiers from Hittite Microwavetwo chips and one packaged deviceboost signals at frequencies through 31.5 GHz. Model HMC949 is one of the chips, a four-stage GaAs pHEMT amplifier capable of 2 W (+33 dBm) output power and 31 dB gain from 12 to 16 GHz with +35.5 dBm saturated output power with 26-percent power-added efficiency (PAE). It draws 1200 mA from a +7-VDC supply and measures 2.82 x 1.50 mm.
The other chip, model HMC950, is a four-stage, 4-W amplifier with 28 dB gain from 12 to 16 GHz. It delivers +37 dBm saturated output power with 23-percent PAE. The packaged GaAs pHEMT amplifier, model HMC943LP5E, provides 21 dB gain and 1.5 W output power from 24 to 31.5 GHz. It is supplied in a 5 x 5 mm plastic surface-mount package and draws 1200 mA from a +5.5-VDC supply.