After a long history of offering packaged devices only, California Eastern Laboratories (CEL) is now selling the model UPG303100G silicon germanium (SiGe) heterojunction-bipolar-transistor chip, ideal for applications in low-noise amplifiers (LNAs). The transistor die features a low noise figure of 0.8 dB at 2 GHz and 0.95 dB at 5.2 GHz with maximum stable gain of 21.5 dB at 2 GHz and 10 dB at 5.2 GHz. The transistor is fabricated with NEC's newest 110-GHz-transition-frequency SiGe process.
California Eastern Laboratories