Ideal for cellular and other wireless communications designs, model HMC921LP4E is a GaAs heterojunction-bipolar-transistor (HBT) power amplifier (PA) from Hittite Microwave capable of 2 W output power from 400 to 2700 MHz. The robust output power is accompanied by as much as 16-dB gain and third-order intercept point of +49 dBm. The compact amplifier can be biased in either a low quiescent current mode or a maximum output power mode by adjusting a single external resistor. The RoHS-compliant device is supplied in a 4 x 4 mm leadless QFN package and operates from a single +5-VDC supply.