recently added the ILD1011M550HV to its high-power LDMOS transistors for L-band avionics applications. It offers a minimum of 550 watts of output power with 16.5-dB nominal gain across the instantaneous operating frequency band of 1030 to 1090 MHz. The transistor displays a high level of ruggedness into any phase of a 20:1 load VSWR. Excellent reliability in pulsed avionics systems is achieved using a complete gold metal system: die, wire bond, and package. It is internally pre-matched to simplify use, and is 100-percent production tested in a broadband RF test fixture. Samples of the ILD1011M550HV are available now.