Characterized for 5.8-GHz IEEE 802.11a mobile WiFi applications, the model NESG4030M14 heterojunction bipolar transistor (HBT) features a typical noise figure of 1.1 dB at 5.8 GHz with associated gain of typically 11.5 dB. Fabricated using the140-GHz fMAX UHS4 silicon-germanium:carbide (SiGe:C) process, the NESG4030M14 offers 80 V (MM) of on-board electrostatic-discharge (ESD) protection. It delivers +9 dBm output power at 1-dB compression while drawing only 6 mA current from a +2-VDC supply. It is housed in a package measuring 1.0 x 1.2 x 0.5 mm. P&A: $0.40 in 10,000 quantities.