Jazz Semiconductor is now offering its 0.18-micron silicon-germanium (SiGe) BiCMOS process for next-generation, "green," energy-efficient analog integrated circuits (ICs). The firm's SBC18 process provides significant power and efficiency savings compared to conventional silicon CMOS and supports the design of extremely low-power devices for integrated wireless networking products. SiGe NPN transistors fabricated with the process feature as much as 30 percent power savings over standard CMOS devices in high-speed analog circuits using current-mode-logic (CML) technology. The SBC18 process yields SiGe devices with transition frequencies to 200 GHz for fabricating high-frequency designs, including automotive radar devices at 77 GHz.