Hittite Microwave Corp. has announced two new die and two surface-mount-technology-packaged GaAs monolithic-microwave-integrated-circuit (MMIC) pseudomorphic-high-electron-mobility-transistor (PHEMT) distributed power amplifiers for electronic warfare (EW), radar, and test applications from DC to 15 GHz. Model HMC619 is a chip amplifier with as much as 12 dB gain and +28 dBm output power at 1-dB compression from DC to 10 GHz. It delivers third-order intercept of +37 dBm and draws 300 mA from a +12-VDC supply. Model HMC619LP5E is a GaAs power amplifier in a plastic 5 x 5 mm SMT package with 11 dB gain and +27 dBm output power at 1-dB compression from DC to 10 GHz. Model HMC659 is a GaAs MMIC PHEMT amplifier die with 19 dB gain and +26.5 dBm output power at 1-dB compression from DC to 15 GHz. It draws 300 mA from a +8-VDC supply. Model HMC659LC5 is a GaAs MMIC power amplifier in a ceramic 5 x 5 SMT package with 19 dB gain and +27.5 dBm output power from DC to 15 GHz. It draws 300 mA from a +8-VDC supply.

Hittite Microwave Corp.