RFMD designs and manufactures high-performance radio-frequency components and compound-semiconductor technologies. The company’s products enable mobility and connectivity while supporting advanced functionality in the cellular handset, wireless infrastructure, WiFi, CATV/broadband, smart-energy/AMI, and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise. It is a preferred supplier to many mobile-device, customer-premise, and communications-equipment providers.
Robert A. Bruggeworth, President and Chief Executive Officer
Prior to his current role, Mr. Bruggeworth served as President of RFMD from June 2002 until January 2003. He was formerly President of the Wireless Products Group of RFMD (before which he was Vice President of Wireless Products). Prior to joining RFMD, Bruggeworth was employed at AMP, Inc., a supplier of electrical and electronic connection devices, from July 1983 to April 1999. There, he most recently served as Vice President of Global Computer and Consumer Electronics based in Hong Kong, China. In addition to serving on RFMD’s board of directors, Bruggeworth is a member of the board of directors of Guilford Technical Community College in Greensboro, NC and the Mine Safety Appliances Co. in Pittsburgh, PA. He is a graduate of Wilkes University, Wilkes-Barre, PA.
Year company was formed: 1991
RF Micro Devices was founded in 1991 by Bill Pratt, Powell Seymour, and Jerry Neal. It became a public company on June, 3, 1997. The company rebranded itself as RFMD in 2006.
Acquistions: RF Nitro Communications in 2001, Resonext Communications, Inc. in 2002; Silicon Wave, Inc. in 2004, Sirenza Microdevices and Filtronic Compound Semiconductors Ltd. in 2007, and Universal Microwave Corp. (UMC) in 2008.
RFMD lists these “firsts” among its accomplishments:
• Commercialization of GaAs HBT
• 6-in. GaAs manufacturing capability
• Shipping of one billion power amplifiers
• Launch of open-loop polar modulation transmit architecture
• Introduction of integrated power control for PAs (PowerStar®)
• Shipment of RF components with integrated RF shielding
• Commercialization of high-performance, low-cost CMOS for switch-based products
• Commercialization of RF-configurable power core (PowerSmart®)
• Exceeded 50% peak efficiency in 3G/4G power amplifiers
• Introduction of GaN in cable-TV amplifier applications