E-pHEMT Amplifier Powers WLANs

Capable of operating to 10 GHz, the MGA-425P8 enhancement-mode pseudomorphic high-electron-mobility transistor (E-pHEMT) medium-power amplifier from the Semiconductor Products Group of Agilent Technologies (Palo Alto, CA). It is a truly general-purpose wireless amplifier capable of working in IEEE 802.11a wireless local-area-networks (WLANs) in the 5-GHz unlicensed national information infrastructure (UNII) band, IEEE 802.11g and IEEE 802.11b WLANs operating in the 2.4-GHz industrial-scientific-medical (ISM) band, 2.4- and 5.8-GHz cordless telephones, and wireless local loops (WLL). Supplied in a JEDEC DRP-N LPCC 2-mm-square leadless plastic chip carrier, the package's lead-free backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow.

When evaluated at 5.25 GHz and +3 VDC (58 mA), the amplifier offers 16-dB gain and 10.3-percent power-added efficiency (PAE), as well as +20.3-dBm output power at 1-dB compression. The output power at 5-percent error-vector magnitude (EVM) is +13.3 dBm while the output third-order intercept point is +32.9 dBm. The monolithic-microwave-integrated-circuit (MMIC) amplifier includes on-chip bias circuitry for operation from a single voltage source. A smart-bias function allows the linearity (third-order intercept) to be adjusted from +20 to +35 dBm by changing a single external resistor. The amplifier is expected to sell for $1.73 in 5500-piece quantities.

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