Raytheon Company and their efforts on gallium nitride (GaN) technology have received a large vote of confidence from the United States Office of the Secretary of Defense (OSD). The US OSD has recognized Raytheon for their successful completion of a Defense Production Act (DPA) Title III GaN production improvement program.

Raytheon’s demonstration attested to the reliability of GaN technology in military systems, with Raytheon received a Manufacturing Readiness Level (MRL) of “8,” the highest level obtained by any organization in the defense industry for GaN technology thus far. The high rating attests to the reliability and suitability of GaN technology for military applications. MRL measurements are used by the OSD and major companies to assess the maturity of a manufacturing process.

Raytheon has been a leader in the development of GaN semiconductor technology, which is well suited for use in high-frequency electronic systems. In  defense applications GaN technology is capable of achieving high radar transmit power with smaller amplifiers, while also boosting receiver signal sensitivity, enabling the use of smaller system antennas, which provides greater flexibility and reduces lifecycle costs.