Visitors to TriQuint’s booth at the 2013 IMS learned that the foundry offers standard and custom products based on gallium nitride (GaN) semiconductor materials, including wideband GaN power amplifiers (PAs) for S-band, X-band, and Ku/Ka-band applications.
Visitors to the Triquint 2013 IMS booth got a rare look at a gallium nitride (GaN) semiconductor wafer used for integrated circuits (ICs) ranging from amplifiers to switches.
Of the many custom device fabrication services offered by TriQuint at their 2013 IMS booth, they provided examples of amplifiers, phase shifters, switches, and combinations of component functions.
At the 2013 IMS, TriQuint showed many examples of its gallium nitride (GaN) driver amplifiers and low-noise amplifiers (LNAs), including its model TGA2611 LNA in development, with 1-dB noise figure and +25-dBm output power at 1-dB compression from 2 to 6 GHz.
TriQuint displayed wideband gallium nitride (GaN) power amplifiers (PAs) at its 2013 IMS booth, including its production model TGA2573 PA, with 10 W and 20% power-added efficiency (PAE) from 2 to 18 GHz.
Among the prototype gallium nitride (GaN) power transistors previewed at the 2013 IMS, TriQuint detailed its model T1G4004032-FS/FL, with 42-W saturated output power and 16-dB gain from DC to 3.5 GHz.
TriQuint offered GaN-based power amplifiers (PAs) for specific application bands at the 2013 IMS, such as the S-band model TGA2814, now in release, with 80 W output power from 3.0 to 3.5 GHz. The PA provides 22-dB gain and 55% power-added efficiency (PAE) over that frequency range.
TriQuint offered GaN-based power amplifiers (PAs) for specific application bands at the 2013 IMS, such as the X-band model TGA2590 PA, with 25-dB gain and 30% power-added efficiency (PAE) from 6 to 12 GHz.
Among its offering of band-specific power amplifiers (PAs) at the 2013 IMS, TriQuint offered its model TGA2572-FL Ku/Ka-band PA with 16-W output power, 18-dB gain, and 25% power-added efficiency (PAE) from 14 to 16 GHz.
In addition to amplifiers, TriQuint showed a number of its GaN switches at the 2013 IMS, including its model TGS2353, now in production, with 10-W power-handling capability and 1.5 dB or less insertion loss from 100 MHz to 18 GHz.
TriQuint’s booth personnel at the 2013 IMS also detailed the firm’s extensive GaN foundry services, using GaN on silicon-nitride (GaN-on-SiC) technology with quarter-micron minimum feature size, 100-mm wafers, and frequency range of DC to 18 GHz.
At the 2013 IMS, TriQuint’s booth personnel offered a sampling of the different semiconductor wafer sizes used in their foundry, with available frequencies through 38 GHz.
At the 2013 IMS, TriQuint detailed its foundry capabilities in fabricating high-efficiency, high-power pseudomorphic high-electron-mobility-transistor (pHEMT) devices for narrowband and broadband applications.
TriQuint showcased and demonstrated their latest products at the International Microwave Symposium 2013 in Seattle, WA.
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