Northrop Grumman's newly developed SATCOM system flies aboard the Firebird demonstrator aircraft during a recent demonstration. (Northrop Grumman photo by Alan Radecki)
Northrop Grumman's newly developed SATCOM system flies aboard the Firebird demonstrator aircraft during a recent demonstration. (Northrop Grumman photo by Alan Radecki)
Northrop Grumman's newly developed SATCOM system flies aboard the Firebird demonstrator aircraft during a recent demonstration. (Northrop Grumman photo by Alan Radecki)
Northrop Grumman's newly developed SATCOM system flies aboard the Firebird demonstrator aircraft during a recent demonstration. (Northrop Grumman photo by Alan Radecki)
Northrop Grumman's newly developed SATCOM system flies aboard the Firebird demonstrator aircraft during a recent demonstration. (Northrop Grumman photo by Alan Radecki)

GaN Process Enables Conversion of Satcom Solution for Small Aircraft

Jan. 21, 2014
A satellite-communications (satcom) system was successfully converted for aircraft use when size constraints are an issue, thanks to the benefits of gallium nitride (GaN) technology.

By minimizing the size of aircraft communications systems, designers can create more space for sensor payloads and other necessary equipment. In a rather novel approach to this problem, a small satellite-communications (satcom) system was recently reinvented as an aircraft communications system by using gallium-nitride (GaN) technology.

Recently, Northrop Grumman demonstrated this satcom system aboard a Firebird intelligence-gathering aircraft. The demonstration was part of an objective to provide aircraft operators with high-quality, real-time data in situations when a large, heavy communications system is not an option. The system successfully provided full-motion video to the ground, sending sensor data to a satellite and back to a ground station at a high rate of transfer—a “first” for a small communications system. For both the compact design and high transfer rate, Northrop Grumman credits its 0.2-μm GaN high-electron-mobility-transistor (HEMT) process.

According to the firm, that process can provide 10 times the power density of previously used gallium arsenide (GaAs) solutions to 60 GHz. The technology is fabricated on 4-mil.-thick, 3-in.substrates. With its high breakdown voltage and saturation electron velocity, Northrop Grumman says that it is ideal for high-power, high-frequency electronics.

Sponsored Recommendations

Frequency Modulation Fundamentals

March 14, 2024
The development of crystal-clear FM communications was an innovation of genius and toil. Utilized today in applications such as radar, seismology, telemetry and two-way radios...

44 GHz Programmable Signal Generator

March 14, 2024
The Mini-Circuits SSG-44G-RC is a 0.1 to 44 GHz signal source with an RF output range of -40 to +17 dBm with fine resolution. This model supports CW and pulsed (? 0.5 ?s) outputs...

Webinar: Introduction to OTA Measurement for mmWave and Sub-THz

Feb. 19, 2024
Join Jeanmarc Laurent, a leading expert from MilliBox, for an exclusive live webinar showcasing a complete Over-the-Air (OTA) testing system setup. In this immersive session, ...

Using a CMT VNA with Socket Server

Feb. 19, 2024
This application note describes use of a software application CMT Socket Server which is distributed and supported by Aphena Ltd. Please email [email protected] regarding purchase...