Based on GaN-on-SiC semiconductor technology, the Class AB high electron mobility transistor is capable of 1200 W output power and 17 dB gain from 1030 to 1090 MHz. See it at IMS Exhibition Booth 850....More
Anritsu will be active at IMS Booth No. 949 showing many of its test instruments in operation. In-booth demonstrations will include high-power vector-network-analyzer measurements and millimeter-wave signal analysis....More
The secret to its unique design is that it grants access to wireless spectrum in the 5 GHz range seldom used by other routers. More channels means that individual devices can play around with more bandwidth....More
For every success within Qualcomm’s second quarter financial results, other questions were raised about the future of its modem chip business. The company reassured investors against rumors that it would lose business to Intel....More
The Upsky Long Island Hotel recently hosted the Long Island RF/Microwave Symposium & Exhibits. In addition to several presentations, the event featured a number of exhibitors eager to display their products.
The microchip filters out noise leaking into antennas handling frequencies known as terahertz waves. The new device marks another step forward for terahertz antennas, which have been built ten times faster than current technology....More
The keynote address at the Trends in Microwaves Symposium next week will trace the history of microwave design. It will be followed by four other presentations organized by the IEEE Microwave Theory and Techniques Society....More