Cree http://mwrf.com/taxonomy/term/6784/more en GaN HEMT Packs C-Band Power http://mwrf.com/active-components/gan-hemt-packs-c-band-power <div class="node-body article-body">This high-power transistor provides 200 W output power from 4.4 to 5.0 GHz.</div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/active-components/gan-hemt-packs-c-band-power" target="_blank">read more</a></p> http://mwrf.com/active-components/gan-hemt-packs-c-band-power#comments Cree Active components Commercial Defense Industrial Thu, 18 Dec 2014 17:14:00 +0000 30521 at http://mwrf.com Cree: Power Amplifier Demonstration of Over-mold Plastic GaN HEMT for 4G Cellular Infrastructure http://mwrf.com/cree-power-amplifier-demonstration-over-mold-plastic-gan-hemt-4g-cellular-infrastructure <div class="node-body link-body">In this video, Cree demonstrations the performance of an 300W Gallium Nitride (GaN) transistor (HEMT). The device part of a family of over-mold plastic GaN HEMTs for high power amplifiers. Power levels range from 60W-300W and cover all LTE bands. Cree is the first semiconductor manufacturer to offer 300W of power at 2.7GHz LTE. </div> <div class="field-image-promo"> <img class="imagefield imagefield-field_image_promo" width="595" height="335" alt="" src="http://mwrf.com/site-files/mwrf.com/files/Power%20Amplifier%20Demonstration%20of%20Over-mold%20Plastic%20GaN%20HEMT%20for%204G%20Cellular%20Infrastructure.jpg?1404397725" /> </div> <div class="field-link-target"> <span>Open In New Window:&nbsp;</span> No </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/cree-power-amplifier-demonstration-over-mold-plastic-gan-hemt-4g-cellular-infrastructure" target="_blank">read more</a></p> Cree Components Thu, 03 Jul 2014 14:27:00 +0000 26871 at http://mwrf.com Cree: Power Amplifier Demonstration of a Plastic GaN HEMT for 802.11ac WiFi http://mwrf.com/cree-power-amplifier-demonstration-plastic-gan-hemt-80211ac-wifi <div class="node-body link-body">In this video, Cree demonstrations the performance of an unmatched Gallium Nitride (GaN) transistor (HEMT) in a application circuit designed for 802.11ac WiFi specification compliance. The CGHV1F006S, normally operates at 40V and 6W of power out, but in this case, Cree is operating the transistor at 20V to achieve 1W of average power under 802.11ac. </div> <div class="field-image-promo"> <img class="imagefield imagefield-field_image_promo" width="595" height="335" alt="" src="http://mwrf.com/site-files/mwrf.com/files/Power%20Amplifier%20Demonstration%20of%20a%20Plastic%20GaN%20HEMT%20for%20802.11ac%20WiFi.jpg?1404397635" /> </div> <div class="field-link-target"> <span>Open In New Window:&nbsp;</span> No </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/cree-power-amplifier-demonstration-plastic-gan-hemt-80211ac-wifi" target="_blank">read more</a></p> Cree Components Thu, 03 Jul 2014 14:25:00 +0000 26861 at http://mwrf.com Cree: An Overview of All New RF Components, Including Doherty Power Amplifier Designs Announced at the IEEE International Microwave Symposium http://mwrf.com/cree-overview-all-new-rf-components-including-doherty-power-amplifier-designs-announced-ieee-interna <div class="node-body link-body">Tom Dekker, director of sales and marketing for Cree’s RF components, discusses the company’s new products. These power amplifier products include plastic devices for telecom small cells, over-mold plastic devices for cellular infrastructure, plastic devices for L/S/C/X-band RADAR, as well as a new line of GaN HEMTs operating at 50V for broadband amplifiers and tactical communications.</div> <div class="field-image-promo"> <img class="imagefield imagefield-field_image_promo" width="595" height="335" alt="" src="http://mwrf.com/site-files/mwrf.com/files/An%20Overview%20of%20All%20New%20RF%20Components%2C%20Including%20Doherty%20Power%20Amplifier%20Designs%20Announced%20at%20the%20IEEE%20International%20Microwave%20Symposium.jpg?1404397527" /> </div> <div class="field-link-target"> <span>Open In New Window:&nbsp;</span> No </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/cree-overview-all-new-rf-components-including-doherty-power-amplifier-designs-announced-ieee-interna" target="_blank">read more</a></p> Cree Components Thu, 03 Jul 2014 14:23:00 +0000 26851 at http://mwrf.com GaN Transistors Fit Into Plastic http://mwrf.com/analog-semiconductors/gan-transistors-fit-plastic <div class="node-body article-body">GaN transistors in plastic packages support applications at S-, C-, and X-band frequencies. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/gan-transistors-fit-plastic" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/gan-transistors-fit-plastic#comments Cree Analog semiconductors Commercial Defense Industrial Mon, 02 Jun 2014 14:15:00 +0000 25791 at http://mwrf.com Plastic-Pack GaN Powers 3.8 GHz http://mwrf.com/analog-semiconductors/plastic-pack-gan-powers-38-ghz <div class="node-body article-body">A line of GaN HEMT devices provides power levels to 30 W through 3.8 GHz in plastic packages. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/plastic-pack-gan-powers-38-ghz" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/plastic-pack-gan-powers-38-ghz#comments Cree Analog semiconductors Commercial Industrial Tue, 20 May 2014 18:56:00 +0000 25381 at http://mwrf.com GaN Transistors Power L-Band Radar http://mwrf.com/analog-semiconductors/gan-transistors-power-l-band-radar <div class="node-body article-body">These GaN transistors provide 250 and 500 W output power for 1.2-to-1.4-GHz L-band radar systems. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/gan-transistors-power-l-band-radar" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/gan-transistors-power-l-band-radar#comments Cree Analog semiconductors Defense Sat, 14 Sep 2013 16:29:00 +0000 17871 at http://mwrf.com Cree’s GaN Technology Serves LTE Base Stations http://mwrf.com/analog-semiconductors/cree-s-gan-technology-serves-lte-base-stations <div class="node-body article-body">GaN device technology is driving improved performance for Doherty amplifiers. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/cree-s-gan-technology-serves-lte-base-stations" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/cree-s-gan-technology-serves-lte-base-stations#comments Cree Analog semiconductors Commercial Tue, 20 Aug 2013 16:17:00 +0000 17281 at http://mwrf.com Image Gallery: Cree at IMS 2013 http://mwrf.com/semiconductors/image-gallery-cree-ims-2013 <div class="field-byline"> MWRF Staff </div> <div class="node-body gallery-body">Cree showcased and demonstrated their latest products at the International Microwave Symposium 2013 in Seattle, WA.</div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/semiconductors/image-gallery-cree-ims-2013" target="_blank">read more</a></p> http://mwrf.com/semiconductors/image-gallery-cree-ims-2013#comments Cree Semiconductors Thu, 13 Jun 2013 16:01:00 +0000 15721 at http://mwrf.com 50-V GaN HEMTs Aim At Cell Networks http://mwrf.com/analog-semiconductors/50-v-gan-hemts-aim-cell-networks <div class="node-body article-body">A line of 50-Ω impedance-matched power transistors has been developed for high-efficiency at cellular communications frequencies when operating from 50-V supplies.</div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/50-v-gan-hemts-aim-cell-networks" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/50-v-gan-hemts-aim-cell-networks#comments Cree Analog semiconductors Commercial Wed, 27 Mar 2013 19:17:00 +0000 13551 at http://mwrf.com