Analog semiconductors http://mwrf.com/taxonomy/term/6861/more en Envelope Tracking and Digital Pre-Distortion Test Solution for RF Amplifiers http://mwrf.com/active-components/envelope-tracking-and-digital-pre-distortion-test-solution-rf-amplifiers <div class="field-deck"> Sponsored by: Rohde & Schwarz </div> <div class="node-body article-body">An increasing number of power amplifiers (PA) support the envelope tracking (ET) technology in order to reduce power consumption and improve efficiency. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/active-components/envelope-tracking-and-digital-pre-distortion-test-solution-rf-amplifiers" target="_blank">read more</a></p> http://mwrf.com/active-components/envelope-tracking-and-digital-pre-distortion-test-solution-rf-amplifiers#comments Active components Analog semiconductors Digital semiconductors Mixed-signal semiconductors Test & Measurement - analyzers White Paper Fri, 27 Mar 2015 14:17:00 +0000 32781 at http://mwrf.com Power Added Efficiency Measurement http://mwrf.com/active-components/power-added-efficiency-measurement <div class="field-deck"> Sponsored by: Rohde & Schwarz </div> <div class="node-body article-body">Besides the four s-parameters, hot-s22 and stability, the Power Added Efficiency (PAE) is a key parameter for amplifier which represents how efficient the amplifier converts DC energy to RF energy.</div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/active-components/power-added-efficiency-measurement" target="_blank">read more</a></p> http://mwrf.com/active-components/power-added-efficiency-measurement#comments Active components Analog semiconductors Digital semiconductors Mixed-signal semiconductors Test & Measurement - analyzers White Paper Fri, 27 Mar 2015 14:17:00 +0000 32791 at http://mwrf.com Testing S-Parameters on Pulsed Radar Power Amplifier Modules http://mwrf.com/active-components/testing-s-parameters-pulsed-radar-power-amplifier-modules <div class="field-deck"> Sponsored by: Rohde & Schwarz </div> <div class="node-body article-body">In many cases, devices need to be characterized using pulsed instead of CW signals. Be it for on-wafer measurement of power amplifiers, where heat sinks are difficult or even impossible to implement, for power amplifier modules for pulsed radar systems or other applications. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/active-components/testing-s-parameters-pulsed-radar-power-amplifier-modules" target="_blank">read more</a></p> http://mwrf.com/active-components/testing-s-parameters-pulsed-radar-power-amplifier-modules#comments Active components Analog semiconductors Digital semiconductors Mixed-signal semiconductors Test & Measurement - analyzers White Paper Fri, 27 Mar 2015 14:17:00 +0000 32801 at http://mwrf.com Microsemi Acquires Vitesse to Expand IoT Commitment http://mwrf.com/semiconductors/microsemi-acquires-vitesse-expand-iot-commitment <div class="node-body article-body">Microsemi entered a definitive agreement to acquire Vitesse Semiconductor, a transaction valued at about $389 million.</div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/semiconductors/microsemi-acquires-vitesse-expand-iot-commitment" target="_blank">read more</a></p> http://mwrf.com/semiconductors/microsemi-acquires-vitesse-expand-iot-commitment#comments News Microsemi Analog semiconductors Digital semiconductors Mixed-signal semiconductors Semiconductors Mon, 23 Mar 2015 17:20:00 +0000 32691 at http://mwrf.com GaAs Low-Noise Amp Boosts 17 to 27 GHz http://mwrf.com/analog-semiconductors/gaas-low-noise-amp-boosts-17-27-ghz <div class="node-body article-body">This low-power LNA chip is capable of 24-dB gain and 1.3-dB typical noise figure from 17 to 27 GHz. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/gaas-low-noise-amp-boosts-17-27-ghz" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/gaas-low-noise-amp-boosts-17-27-ghz#comments Analog semiconductors Commercial Defense Industrial Fri, 06 Mar 2015 14:13:00 +0000 32201 at http://mwrf.com <p>Model CMD163 is an LNA chip capable of 24-dB typical gain and 1.3-dB typical noise figure from 17 to 27 GHz.</p> SPDT Switch Controls 20 GHz http://mwrf.com/analog-semiconductors/spdt-switch-controls-20-ghz <div class="node-body article-body">A SPDT switch operates from DC to 20 GHz with positive gain slope. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/spdt-switch-controls-20-ghz" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/spdt-switch-controls-20-ghz#comments Analog semiconductors Commercial Defense Industrial Tue, 25 Nov 2014 16:02:00 +0000 29951 at http://mwrf.com High-Gain GaN-on-SiC Transistors Eye Radar Pulsed Apps http://mwrf.com/analog-semiconductors/high-gain-gan-sic-transistors-eye-radar-pulsed-apps <div class="node-body article-body">MACOM’s gallium-nitride (GaN)-on-silicon carbide (SiC) HEMT pulsed-power transistors operate over multiple octave bandwidths.</div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/high-gain-gan-sic-transistors-eye-radar-pulsed-apps" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/high-gain-gan-sic-transistors-eye-radar-pulsed-apps#comments News Analog semiconductors Fri, 03 Oct 2014 15:00:00 +0000 28821 at http://mwrf.com GaN MMIC Switch Controls 100-W Pulses http://mwrf.com/triquint-semiconductor/gan-mmic-switch-controls-100-w-pulses <div class="field-deck"> This low-loss GaN-on-SiC SPDT switch can handle signals from 500 MHz to 6 GHz, both at CW power levels to 40 W and pulsed power levels to 100 W. </div> <div class="node-body article-body">This surface-mount GaN-based SPDT switch handles as much as 40 W CW power and 100 W pulsed power from 0.5 to 6.0 GHz. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/triquint-semiconductor/gan-mmic-switch-controls-100-w-pulses" target="_blank">read more</a></p> http://mwrf.com/triquint-semiconductor/gan-mmic-switch-controls-100-w-pulses#comments TriQuint Semiconductor Analog semiconductors Commercial Defense Industrial Fri, 26 Sep 2014 20:05:00 +0000 28741 at http://mwrf.com Basic RF Amplifier Measurements using a Vector Network Analyzer http://mwrf.com/test-measurement-analyzers/basic-rf-amplifier-measurements-using-vector-network-analyzer <div class="field-deck"> Sponsored by Rohde & Schwarz </div> <div class="node-body article-body">This Application note discusses the effective characterization and optimization of RF amplifier parameters such as S-parameters, return loss, gain, isolation, impedance and stability. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/test-measurement-analyzers/basic-rf-amplifier-measurements-using-vector-network-analyzer" target="_blank">read more</a></p> http://mwrf.com/test-measurement-analyzers/basic-rf-amplifier-measurements-using-vector-network-analyzer#comments Active components Analog semiconductors Digital semiconductors Mixed-signal semiconductors Test & Measurement - analyzers Test & Measurement - generators White Paper Thu, 17 Jul 2014 20:37:00 +0000 27141 at http://mwrf.com Designing AlGaN/GaN HEMTs for W-Band http://mwrf.com/analog-semiconductors/designing-algangan-hemts-w-band <div class="field-byline"> Luo Xiaobin, Lv Yuanjie, Yu Weihua, Lv Xin, Dun Shaobo, and Feng Zhihong </div> <div class="field-deck"> This device model provides accurate DC and large-signal parameters as compared to measurements on fabricated semiconductors, showing it to be an effective tool for building W-band HEMTs. </div> <div class="node-body article-body">This model and analysis supports the device of a GaN HEMT well suited for W-band applications. </div> <div class="og_rss_groups"></div><p><a href="http://mwrf.com/analog-semiconductors/designing-algangan-hemts-w-band" target="_blank">read more</a></p> http://mwrf.com/analog-semiconductors/designing-algangan-hemts-w-band#comments Analog semiconductors Commercial Defense Industrial Fri, 27 Jun 2014 16:15:00 +0000 26641 at http://mwrf.com