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More in Analog semiconductors

  • Mar. 27, 2013
    Article

    GaN Amps Power CATV Applications

    A pair of miniature power amplifiers use GaN technology for low distortion in CATV applications....More
  • Mar. 27, 2013
    Article

    50-V GaN HEMTs Aim At Cell Networks

    A line of 50-Ω impedance-matched power transistors has been developed for high-efficiency at cellular communications frequencies when operating from 50-V supplies....More
  • Mar. 27, 2013
    Article

    Doherty Amp Boosts China’s LTE Signals

    A miniature but robust power amplifier based on a discrete GaN device has been developed for LTE microcellular base stations....More
  • Feb. 20, 2013
    Article

    GaN Device Drives 100 W At 1 GHz

    A packaged GaN HEMT device generates 100 W output power from 100 MHz to 1 GHz under pulsed or CW conditions....More
  • Feb. 7, 2013
    Article

    Low-Power Receiver Serves Multiple Wireless Standards

    By combining a current-reuse amplifier and switch-based mixer, a dual-band receiver front end offers excellent performance with extremely low power consumption....More
  • Feb. 7, 2013
    Article

    Performance Guides Transistor Selection

    RF/microwave transistors offer many different performance capabilities by type of device, with some better for lower noise and some for higher power....More
  • Feb. 6, 2013
    Article

    Device Diversity Drives Industry Forward

    Rather than find a single semiconductor technology that is ideal for all applications, the RF/microwave industry relies on numerous device processes, each with its own set of strengths and weaknesses....More
  • Jan. 23, 2013
    Article

    GaAs MMICs Drive Vehicle ESR Systems 1

    A lineup of integrated circuits serves automotive applications at 77 GHz....More
  • Dec. 3, 2012
    Article

    Top 2012 Products Blend Value and Performance 1

    The top products of 2012 embody the creativity and ingenuity of the RF/microwave industry’s design-engineering community....More
  • Nov. 16, 2012
    Article

    50-V GaN HEMTs Power LTE Networks

    A set of internally matched power transistors is tailored for +50-VDC LTE applications at output levels to 200 W through 2.7 GHz....More
  • Nov. 13, 2012
    Article

    Transceiver ICs Energize Wideband Infrastructure

    A dual-channel downconverter and direct-quadrature-modulator serve wireless communications infrastructure applications to 4 GHz....More
  • Oct. 8, 2012
    Article

    GaAs Chips Help VSAT Systems 5

    A family of Ka-band GaAs chipsets has been developed by TriQuint Semiconductor for use in very-small-aperture-terminal (VSAT) satellite communications systems. The family includes a variable-gain amplifier, a 1-W power amplifier (PA), a subharmonic frequency upconverter, and a block frequency downconverter....More
  • Oct. 8, 2012
    Article

    Frequency Doubler Extends To 30 GHz

    Model XX1010-QT is a GaAs monolithic-microwave-integrated-circuit (MMIC) frequency doubler from M/A-COM Technology Solutions that is well suited for satellite-communications (satcom) and point-to-point communications systems....More
  • Oct. 3, 2012
    Article

    Lansdale Wheels Out Wireless Subsystem

    Lansdale Semiconductor now owns single-source rights to the model MC13150 wireless subsystem for use in cellular and other analog wireless applications. The integrated circuit (IC), which was originally designed and built by Freescale Semiconductor, is a single-conversion frequency-modulated (FM) receiver with split intermediate frequency (IF)....More
  • Sep. 18, 2012
    Article

    IF Gain Block Builds On SiGe

    Model LTC6431-15 is an intermediate-frequency (IF) gain block from Linear Technology with broad frequency range from 20 to 1700 MHz and beyond....More
  • Sep. 11, 2012
    Article

    CMOS Switches Extend Control To 8 GHz 1

    Silicon CMOS was once dismissed as a technology with limited practical use at RF and microwave frequencies. But as CMOS foundries have improved their feature resolution and repeatability, CMOS has been pushed well through microwave frequencies and even past 60-GHz millimeter-wave frequencies....More
  • Sep. 11, 2012
    Article

    Materials Pave Way To Military Advances

    Technological progress provides a military edge, regardless of whether those new technologies benefit forces on land, at sea, or in the air. RF/microwave technology, which has long been associated with a wide range of defense-related systems—including radar, secure communications, and electronic-warfare (EW) systems—might seem mature....More
  • Aug. 29, 2012
    Article

    Richardson Launches TriQuint GaN Hub

    Richardson RFPD has debuted its micro-website on gallium nitride (GaN) semiconductor technology from TriQuint Semiconductor: the TriQuint GaN Tech Hub. The site represents a collaboration between the two companies, with information provided about the latest GaN products and technology issues....More
  • Aug. 29, 2012
    Article

    GaN Hybrid IC Drives 9 GHz

    Gallium-nitride (GaN) transistor technology is showing great promise in high-power microwave amplifiers for commercial and military uses. Two new offerings from Toshiba America Electronic Components (TAEC) are particularly notable....More
  • Aug. 15, 2012
    Article

    CMOS Driver Steers PIN Diodes

    For those working on high-voltage PIN diode switching circuits, the new model MADR-010574 driver from M/A-COM Technology Solutions can be controlled by 3- or 5-V CMOS-level signals. It provides back bias voltage from 20 to 250 V with forward bias current to 200 mA. The driver supports series-shunt and all-series switching circuits by biasing four PIN diodes simultaneously....More
  • Aug. 15, 2012
    Article

    Amplifiers Power CATV Systems

    A trio of integrated-circuit (IC) products from RF Micro Devices earned recognition from a leading cable-television (CATV) publication for their contributions to that marketplace. Model RFAM2790 is a broadband amplifier that covers 45 to 1003 MHz for enhanced data rates for GSM evolution (EDGE) cellular applications....More
  • Aug. 10, 2012
    Article

    Devices Drive Power From GaN Sources

    Solid-state power transistors continue to gain on vacuum tubes, as device manufacturers explore the capabilities of newer materials, such as gallium nitride (GaN). At this year’s IEEE International Microwave Symposium (IMS) in Montreal, Canada, for example, Toshiba America Electronic Components (TAEC; www.toshiba.com/taec) shows impressive GaN progress in both discrete-device and monolithic forms, with a power transistor for Ka-band satellite communications (satcom) use and an X-band monolithic-microwave-integrated-circuit (MMIC) amplifier for radar applications, respectively....More
  • Aug. 1, 2012
    Article

    176 Million Die Added To Critical Collection

    Many high-end electronic systems, notably those in military applications, rely on semiconductors that may have been discontinued for general-purpose use. Rochester Electronics serves these applications by providing a reliable supply of discontinued semiconductors....More
  • Jul. 11, 2012
    Article

    Amplifier Boosts 71 To 76 GHz

    Model HHPAE-459 is a millimeter-wave power amplifier designed for use from 71 to 76 GHz. It provides small-signal gain of 29 dB over that frequency range, with +18-dBm output power at 1-dB compression. Based on monolithic-microwave-integrated-circuit (MMIC) technology, the amplifier operates from a single +6.5-VDC bias supply with an internal voltage regulator and bias sequencer. The amplifier is ideal for transmitters in E-band radio communications systems....More
  • Jul. 11, 2012
    Article

    LNAs Limit Noise In Cellular Stations

    A pair of low-noise amplifiers (LNAs) leverage GaAs E-pHEMT technology to achieve low noise figures through 2.7 GHz. Model TQP3M9036 operates from 400 to 1500 MHz with a noise figure of 0.45 dB at 900 MHz and the model TQP3M9037 runs from 1500 to 2700 MHz with a noise figure of 0.40 dB at 1900 MHz. Model TQP3M9036 features 19-dB gain at 900 MHz with +20-dBm output power at 1-dB compression and an output third-order intercept point of +35 dBm. Model TQP3M9037 offers 20-dB gain at 1900 MHz with +21-dBm output power at 1-dB compression and an output third-order intercept point of +36 dBm....More

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