Based on GaN-on-SiC semiconductor technology, the Class AB high electron mobility transistor is capable of 1200 W output power and 17 dB gain from 1030 to 1090 MHz. See it at IMS Exhibition Booth 850....More
Whether you are looking for variable attenuators or low-noise amplifiers, Microwaves & RF has you covered. Here are some of the latest products to help optimize your applications, devices, and systems.
In spite of the widespread availability of high-speed, high-frequency integrated circuits (ICs), discrete diodes and transistors are readily available for RF/microwave circuit design and fabrication....More